Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
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BD 0.310
Each (In a Pack of 10) (Exc. Vat)
BD 0.341
Each (In a Pack of 10) (Including VAT)
10
BD 0.310
Each (In a Pack of 10) (Exc. Vat)
BD 0.341
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.310 | BD 3.100 |
| 100 - 240 | BD 0.255 | BD 2.550 |
| 250 - 490 | BD 0.245 | BD 2.450 |
| 500 - 990 | BD 0.235 | BD 2.350 |
| 1000+ | BD 0.220 | BD 2.200 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Minimum Gate Threshold Voltage
1.65V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Height
1.5mm
Series
IRF9910
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products