Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
Mexico
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BD 1.310
Each (In a Tube of 50) (Exc. Vat)
BD 1.441
Each (In a Tube of 50) (Including VAT)
50
BD 1.310
Each (In a Tube of 50) (Exc. Vat)
BD 1.441
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 1.310 | BD 65.500 |
100 - 200 | BD 1.245 | BD 62.250 |
250+ | BD 1.120 | BD 56.000 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
Mexico