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Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF

RS Stock No.: 220-7490Brand: InfineonManufacturers Part No.: IRFR1010ZTRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0075 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

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Stock information temporarily unavailable.

BD 5.302

BD 0.530 Each (In a Pack of 10) (Exc. Vat)

BD 5.832

BD 0.583 Each (In a Pack of 10) (inc. VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 5.302
20BD 10.605
30BD 15.908
40BD 21.210
50BD 26.512
60BD 31.815
70BD 37.118
80BD 42.420
90BD 47.722
100BD 50.400
110BD 55.440
120BD 60.480
130BD 65.520
140BD 70.560
150BD 75.600

BD 5.302

BD 0.530 Each (In a Pack of 10) (Exc. Vat)

BD 5.832

BD 0.583 Each (In a Pack of 10) (inc. VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 5.302
20BD 10.605
30BD 15.908
40BD 21.210
50BD 26.512
60BD 31.815
70BD 37.118
80BD 42.420
90BD 47.722
100BD 50.400
110BD 55.440
120BD 60.480
130BD 65.520
140BD 70.560
150BD 75.600

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 90BD 0.530BD 5.302
100 - 240BD 0.504BD 5.040
250 - 490BD 0.488BD 4.882
500 - 990BD 0.472BD 4.725
1000+BD 0.446BD 4.462

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0075 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more