Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
97 A
Maximum Drain Source Voltage
100 V
Series
StrongIRFET
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.009 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
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BD 33.750
BD 0.675 Each (In a Tube of 50) (Exc. Vat)
BD 37.125
BD 0.743 Each (In a Tube of 50) (inc. VAT)
50
BD 33.750
BD 0.675 Each (In a Tube of 50) (Exc. Vat)
BD 37.125
BD 0.743 Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
97 A
Maximum Drain Source Voltage
100 V
Series
StrongIRFET
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.009 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si