Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Country of Origin
Mexico
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BD 0.395
Each (In a Tube of 75) (Exc. Vat)
BD 0.435
Each (In a Tube of 75) (Including VAT)
75
BD 0.395
Each (In a Tube of 75) (Exc. Vat)
BD 0.435
Each (In a Tube of 75) (Including VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | BD 0.395 | BD 29.625 |
150 - 300 | BD 0.375 | BD 28.125 |
375+ | BD 0.340 | BD 25.500 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Country of Origin
Mexico