Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Width
4.83mm
Transistor Material
Si
Height
9.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 2.871
BD 1.436 Each (In a Pack of 2) (Exc. Vat)
BD 3.158
BD 1.580 Each (In a Pack of 2) (inc. VAT)
2
BD 2.871
BD 1.436 Each (In a Pack of 2) (Exc. Vat)
BD 3.158
BD 1.580 Each (In a Pack of 2) (inc. VAT)
2
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | BD 1.436 | BD 2.871 |
| 20 - 48 | BD 1.304 | BD 2.607 |
| 50 - 98 | BD 1.238 | BD 2.475 |
| 100 - 198 | BD 1.182 | BD 2.365 |
| 200+ | BD 1.116 | BD 2.233 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Width
4.83mm
Transistor Material
Si
Height
9.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products