Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.02mm
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Stock information temporarily unavailable.
Please check again later.
BD 1.370
Each (In a Pack of 2) (Exc. Vat)
BD 1.507
Each (In a Pack of 2) (Including VAT)
2
BD 1.370
Each (In a Pack of 2) (Exc. Vat)
BD 1.507
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | BD 1.370 | BD 2.740 |
20 - 48 | BD 1.235 | BD 2.470 |
50 - 98 | BD 1.150 | BD 2.300 |
100 - 198 | BD 1.095 | BD 2.190 |
200+ | BD 1.025 | BD 2.050 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
343 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
108 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.02mm
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.