Infineon HEXFET N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.83mm
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
China
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 18.700
BD 0.374 Each (In a Tube of 50) (Exc. Vat)
BD 20.570
BD 0.411 Each (In a Tube of 50) (inc. VAT)
50
BD 18.700
BD 0.374 Each (In a Tube of 50) (Exc. Vat)
BD 20.570
BD 0.411 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.374 | BD 18.700 |
| 100 - 200 | BD 0.297 | BD 14.850 |
| 250 - 450 | BD 0.292 | BD 14.575 |
| 500 - 1200 | BD 0.280 | BD 14.025 |
| 1250+ | BD 0.253 | BD 12.650 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
171 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
4.83mm
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
China
Product details
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products