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N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon SPW20N60C3FKSA1

RS Stock No.: 462-3449Brand: InfineonManufacturers Part No.: SPW20N60C3FKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C3

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

87 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.9mm

Width

5.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.95mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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BD 2.565

Each (Exc. Vat)

BD 2.821

Each (inc. VAT)

N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon SPW20N60C3FKSA1
Select packaging type

BD 2.565

Each (Exc. Vat)

BD 2.821

Each (inc. VAT)

N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 Infineon SPW20N60C3FKSA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9BD 2.565
10 - 24BD 2.435
25 - 49BD 2.335
50 - 99BD 2.265
100+BD 2.140

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C3

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

87 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.9mm

Width

5.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.95mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more