Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
BD 5.698
BD 5.698 Each (Exc. Vat)
BD 6.268
BD 6.268 Each (inc. VAT)
Standard
1
BD 5.698
BD 5.698 Each (Exc. Vat)
BD 6.268
BD 6.268 Each (inc. VAT)
Standard
1
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS