Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
480 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
110 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
BD 2.835
BD 2.835 Each (Exc. Vat)
BD 3.119
BD 3.119 Each (inc. VAT)
Standard
1
BD 2.835
BD 2.835 Each (Exc. Vat)
BD 3.119
BD 3.119 Each (inc. VAT)
Standard
1
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quantity | Unit price |
---|---|
1 - 4 | BD 2.835 |
5 - 19 | BD 2.651 |
20 - 49 | BD 2.488 |
50 - 99 | BD 2.126 |
100+ | BD 2.079 |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
96 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
480 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
110 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS