Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.23mm
Width
25.42mm
Transistor Material
Si
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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BD 12.750
Each (Exc. Vat)
BD 14.025
Each (Including VAT)
1
BD 12.750
Each (Exc. Vat)
BD 14.025
Each (Including VAT)
1
Buy in bulk
quantity | Unit price |
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
38.23mm
Width
25.42mm
Transistor Material
Si
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS