Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
BD 10.521
BD 10.521 Each (Exc. Vat)
BD 11.573
BD 11.573 Each (inc. VAT)
1
BD 10.521
BD 10.521 Each (Exc. Vat)
BD 11.573
BD 11.573 Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 1 | BD 10.521 |
2 - 4 | BD 10.006 |
5 - 9 | BD 9.482 |
10 - 14 | BD 9.230 |
15+ | BD 8.936 |
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.