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IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

RS Stock No.: 192-635Brand: IXYSManufacturers Part No.: IXGT30N120B3D1
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-268

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Length

16.05mm

Width

14mm

Height

5.1mm

Dimensions

16.05 x 14 x 5.1mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

BD 10.521

BD 10.521 Each (Exc. Vat)

BD 11.573

BD 11.573 Each (inc. VAT)

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount

BD 10.521

BD 10.521 Each (Exc. Vat)

BD 11.573

BD 11.573 Each (inc. VAT)

IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 1BD 10.521
2 - 4BD 10.006
5 - 9BD 9.482
10 - 14BD 9.230
15+BD 8.936

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-268

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Length

16.05mm

Width

14mm

Height

5.1mm

Dimensions

16.05 x 14 x 5.1mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more