Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.75V
Height
1.5mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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BD 0.100
Each (On a Reel of 25) (Exc. Vat)
BD 0.110
Each (On a Reel of 25) (Including VAT)
25
BD 0.100
Each (On a Reel of 25) (Exc. Vat)
BD 0.110
Each (On a Reel of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 225 | BD 0.100 | BD 2.500 |
250 - 475 | BD 0.085 | BD 2.125 |
500+ | BD 0.075 | BD 1.875 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.75V
Height
1.5mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.