MagnaChip N-Channel MOSFET, 94 A, 30 V, 8-Pin PowerDFN56 MDU1518URH

RS Stock No.: 871-5025Brand: MagnaChipManufacturers Part No.: MDU1518URH
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

28.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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Stock information temporarily unavailable.

BD 4.675

BD 0.187 Each (On a Reel of 25) (Exc. Vat)

BD 5.143

BD 0.206 Each (On a Reel of 25) (inc. VAT)

MagnaChip N-Channel MOSFET, 94 A, 30 V, 8-Pin PowerDFN56 MDU1518URH
Select packaging type

BD 4.675

BD 0.187 Each (On a Reel of 25) (Exc. Vat)

BD 5.143

BD 0.206 Each (On a Reel of 25) (inc. VAT)

MagnaChip N-Channel MOSFET, 94 A, 30 V, 8-Pin PowerDFN56 MDU1518URH
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDFN56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

28.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Product details

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more