N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
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BD 0.855
Each (In a Tube of 5) (Exc. Vat)
BD 0.941
Each (In a Tube of 5) (Including VAT)
5
BD 0.855
Each (In a Tube of 5) (Exc. Vat)
BD 0.941
Each (In a Tube of 5) (Including VAT)
5
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 5 - 20 | BD 0.855 | BD 4.275 |
| 25 - 45 | BD 0.725 | BD 3.625 |
| 50 - 145 | BD 0.635 | BD 3.175 |
| 150 - 245 | BD 0.600 | BD 3.000 |
| 250+ | BD 0.575 | BD 2.875 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products