Technical Document
Specifications
Brand
MagnatecChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
40 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.02mm
Product details
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
P.O.A.
1
P.O.A.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
MagnatecChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
40 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Width
4.83mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.02mm
Product details
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.