Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 0.788
BD 0.032 Each (In a Pack of 25) (Exc. Vat)
BD 0.867
BD 0.035 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 0.788
BD 0.032 Each (In a Pack of 25) (Exc. Vat)
BD 0.867
BD 0.035 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 125 | BD 0.032 | BD 0.788 |
150 - 725 | BD 0.016 | BD 0.394 |
750 - 1475 | BD 0.016 | BD 0.394 |
1500+ | BD 0.016 | BD 0.394 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details