Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
1.09 nC @ 10 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
BD 0.020
Each (Supplied on a Reel) (Exc. Vat)
BD 0.022
Each (Supplied on a Reel) (Including VAT)
100
BD 0.020
Each (Supplied on a Reel) (Exc. Vat)
BD 0.022
Each (Supplied on a Reel) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 100 | BD 0.020 | BD 2.000 |
200 - 400 | BD 0.020 | BD 2.000 |
500 - 900 | BD 0.015 | BD 1.500 |
1000 - 1900 | BD 0.015 | BD 1.500 |
2000+ | BD 0.015 | BD 1.500 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
1.09 nC @ 10 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details