Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 3.150
BD 0.021 Each (On a Reel of 150) (Exc. Vat)
BD 3.465
BD 0.023 Each (On a Reel of 150) (inc. VAT)
Standard
150
BD 3.150
BD 0.021 Each (On a Reel of 150) (Exc. Vat)
BD 3.465
BD 0.023 Each (On a Reel of 150) (inc. VAT)
Standard
150
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Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
150 - 1350 | BD 0.021 | BD 3.150 |
1500+ | BD 0.010 | BD 1.575 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Product details