Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Stock information temporarily unavailable.
Please check again later.
BD 0.145
Each (Supplied on a Reel) (Exc. Vat)
BD 0.159
Each (Supplied on a Reel) (Including VAT)
50
BD 0.145
Each (Supplied on a Reel) (Exc. Vat)
BD 0.159
Each (Supplied on a Reel) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 50 | BD 0.145 | BD 7.250 |
100 - 200 | BD 0.060 | BD 3.000 |
250 - 450 | BD 0.060 | BD 3.000 |
500 - 950 | BD 0.055 | BD 2.750 |
1000+ | BD 0.050 | BD 2.500 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details