Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
BD 3.675
BD 0.037 Each (In a Pack of 100) (Exc. Vat)
BD 4.043
BD 0.041 Each (In a Pack of 100) (inc. VAT)
100
BD 3.675
BD 0.037 Each (In a Pack of 100) (Exc. Vat)
BD 4.043
BD 0.041 Each (In a Pack of 100) (inc. VAT)
100
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Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details