Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-32 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
215
Transistor Configuration
Single
Maximum Collector Base Voltage
32 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
BD 3.300
BD 0.033 Each (In a Pack of 100) (Exc. Vat)
BD 3.630
BD 0.036 Each (In a Pack of 100) (inc. VAT)
100
BD 3.300
BD 0.033 Each (In a Pack of 100) (Exc. Vat)
BD 3.630
BD 0.036 Each (In a Pack of 100) (inc. VAT)
100
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 100 - 100 | BD 0.033 | BD 3.300 |
| 200 - 400 | BD 0.033 | BD 3.300 |
| 500+ | BD 0.028 | BD 2.750 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-32 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
215
Transistor Configuration
Single
Maximum Collector Base Voltage
32 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details


