Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-50 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
60 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, Nexperia
Bipolar Transistors, Nexperia
BD 1.650
BD 0.033 Each (In a Pack of 50) (Exc. Vat)
BD 1.815
BD 0.036 Each (In a Pack of 50) (inc. VAT)
50
BD 1.650
BD 0.033 Each (In a Pack of 50) (Exc. Vat)
BD 1.815
BD 0.036 Each (In a Pack of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-50 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
60 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details


