Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 4.950
BD 0.248 Each (In a Pack of 20) (Exc. Vat)
BD 5.445
BD 0.273 Each (In a Pack of 20) (inc. VAT)
Standard
20
BD 4.950
BD 0.248 Each (In a Pack of 20) (Exc. Vat)
BD 5.445
BD 0.273 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 140 | BD 0.248 | BD 4.950 |
| 160 - 740 | BD 0.226 | BD 4.510 |
| 760+ | BD 0.198 | BD 3.960 |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
3 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Product details


