Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 3.988
BD 0.160 Each (Supplied as a Tape) (Exc. Vat)
BD 4.387
BD 0.176 Each (Supplied as a Tape) (inc. VAT)
Standard
25
BD 3.988
BD 0.160 Each (Supplied as a Tape) (Exc. Vat)
BD 4.387
BD 0.176 Each (Supplied as a Tape) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 25 | BD 0.160 | BD 3.988 |
| 50 - 100 | BD 0.148 | BD 3.712 |
| 125 - 225 | BD 0.082 | BD 2.062 |
| 250 - 475 | BD 0.077 | BD 1.925 |
| 500+ | BD 0.072 | BD 1.788 |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
520 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.35 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.9V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
417 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details


