Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 3.025
BD 0.060 Each (On a Reel of 50) (Exc. Vat)
BD 3.327
BD 0.066 Each (On a Reel of 50) (inc. VAT)
Standard
50
BD 3.025
BD 0.060 Each (On a Reel of 50) (Exc. Vat)
BD 3.327
BD 0.066 Each (On a Reel of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 50 | BD 0.060 | BD 3.025 |
| 100 - 200 | BD 0.028 | BD 1.375 |
| 250 - 450 | BD 0.022 | BD 1.100 |
| 500 - 950 | BD 0.022 | BD 1.100 |
| 1000+ | BD 0.016 | BD 0.825 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


