Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 2.750
BD 0.028 Each (On a Reel of 100) (Exc. Vat)
BD 3.025
BD 0.031 Each (On a Reel of 100) (inc. VAT)
Standard
100
BD 2.750
BD 0.028 Each (On a Reel of 100) (Exc. Vat)
BD 3.025
BD 0.031 Each (On a Reel of 100) (inc. VAT)
Standard
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 100 | BD 0.028 | BD 2.750 |
200 - 400 | BD 0.028 | BD 2.750 |
500 - 900 | BD 0.022 | BD 2.200 |
1000 - 1900 | BD 0.022 | BD 2.200 |
2000+ | BD 0.016 | BD 1.650 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details