Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 49.500
BD 0.016 Each (On a Reel of 3000) (Exc. Vat)
BD 54.450
BD 0.018 Each (On a Reel of 3000) (inc. VAT)
3000
BD 49.500
BD 0.016 Each (On a Reel of 3000) (Exc. Vat)
BD 54.450
BD 0.018 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details


