Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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Please check again later.
BD 0.155
Each (In a Pack of 10) (Exc. Vat)
BD 0.171
Each (In a Pack of 10) (Including VAT)
10
BD 0.155
Each (In a Pack of 10) (Exc. Vat)
BD 0.171
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.155 | BD 1.550 |
50 - 90 | BD 0.145 | BD 1.450 |
100 - 240 | BD 0.125 | BD 1.250 |
250 - 490 | BD 0.120 | BD 1.200 |
500+ | BD 0.115 | BD 1.150 |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details