P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84AK,215

RS Stock No.: 792-0908Brand: NexperiaManufacturers Part No.: BSS84AK,215
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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BD 0.045

Each (On a Reel of 100) (Exc. Vat)

BD 0.049

Each (On a Reel of 100) (Including VAT)

P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84AK,215
Select packaging type

BD 0.045

Each (On a Reel of 100) (Exc. Vat)

BD 0.049

Each (On a Reel of 100) (Including VAT)

P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84AK,215
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
100 - 100BD 0.045BD 4.500
200 - 400BD 0.035BD 3.500
500 - 900BD 0.030BD 3.000
1000 - 1900BD 0.020BD 2.000
2000+BD 0.020BD 2.000

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more