Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Stock information temporarily unavailable.
Please check again later.
BD 0.045
Each (On a Reel of 100) (Exc. Vat)
BD 0.049
Each (On a Reel of 100) (Including VAT)
100
BD 0.045
Each (On a Reel of 100) (Exc. Vat)
BD 0.049
Each (On a Reel of 100) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 100 | BD 0.045 | BD 4.500 |
200 - 400 | BD 0.035 | BD 3.500 |
500 - 900 | BD 0.030 | BD 3.000 |
1000 - 1900 | BD 0.020 | BD 2.000 |
2000+ | BD 0.020 | BD 2.000 |
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details