Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-250 mA
Maximum Collector Emitter Voltage
-400 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
High Voltage Transistors, Nexperia
Bipolar Transistors, Nexperia
BD 4.262
BD 0.170 Each (Supplied as a Tape) (Exc. Vat)
BD 4.688
BD 0.187 Each (Supplied as a Tape) (inc. VAT)
Standard
25
BD 4.262
BD 0.170 Each (Supplied as a Tape) (Exc. Vat)
BD 4.688
BD 0.187 Each (Supplied as a Tape) (inc. VAT)
Standard
25
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Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-250 mA
Maximum Collector Emitter Voltage
-400 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details


