Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-150 mA
Maximum Collector Emitter Voltage
-500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
High Voltage Transistors, Nexperia
Bipolar Transistors, Nexperia
BD 4.675
BD 0.187 Each (Supplied as a Tape) (Exc. Vat)
BD 5.143
BD 0.206 Each (Supplied as a Tape) (inc. VAT)
Standard
25
BD 4.675
BD 0.187 Each (Supplied as a Tape) (Exc. Vat)
BD 5.143
BD 0.206 Each (Supplied as a Tape) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 25 - 225 | BD 0.187 | BD 4.675 |
| 250 - 475 | BD 0.170 | BD 4.262 |
| 500+ | BD 0.154 | BD 3.850 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-150 mA
Maximum Collector Emitter Voltage
-500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-500 V
Maximum Emitter Base Voltage
-6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details


