Nexperia PBSS4041PT,215 PNP Transistor, 2.7 A, 60 V, 3-Pin SOT-23
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
2.7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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BD 8.800
BD 0.176 Each (Supplied as a Tape) (Exc. Vat)
BD 9.680
BD 0.194 Each (Supplied as a Tape) (inc. VAT)
Standard
50
BD 8.800
BD 0.176 Each (Supplied as a Tape) (Exc. Vat)
BD 9.680
BD 0.194 Each (Supplied as a Tape) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 50 | BD 0.176 | BD 8.800 |
| 100 - 200 | BD 0.094 | BD 4.675 |
| 250 - 450 | BD 0.088 | BD 4.400 |
| 500 - 950 | BD 0.088 | BD 4.400 |
| 1000+ | BD 0.082 | BD 4.125 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
2.7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products