Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT

RS Stock No.: 485-353PBrand: NexperiaManufacturers Part No.: PBSS5160U,115
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Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-1 A

Maximum Collector Emitter Voltage

-60 V

Package Type

UMT

Mounting Type

Surface Mount

Maximum Power Dissipation

415 mW

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

185 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+150 °C

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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P.O.A.

Each (Supplied on a Reel) (Exc. Vat)

Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT
Select packaging type

P.O.A.

Each (Supplied on a Reel) (Exc. Vat)

Nexperia PBSS5160U,115 PNP Transistor, -1 A, -60 V, 3-Pin UMT
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-1 A

Maximum Collector Emitter Voltage

-60 V

Package Type

UMT

Mounting Type

Surface Mount

Maximum Power Dissipation

415 mW

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

185 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+150 °C

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more