Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 0.880
BD 0.176 Each (In a Pack of 5) (Exc. Vat)
BD 0.968
BD 0.194 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 0.880
BD 0.176 Each (In a Pack of 5) (Exc. Vat)
BD 0.968
BD 0.194 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.176 | BD 0.880 |
| 50 - 95 | BD 0.148 | BD 0.742 |
| 100 - 195 | BD 0.110 | BD 0.550 |
| 200 - 245 | BD 0.110 | BD 0.550 |
| 250+ | BD 0.110 | BD 0.550 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.45mm
Country of Origin
Thailand
Product details


