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Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215

RS Stock No.: 725-8326Brand: NexperiaManufacturers Part No.: PMV213SN,215
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

BD 3.630

BD 0.182 Each (In a Pack of 20) (Exc. Vat)

BD 3.993

BD 0.200 Each (In a Pack of 20) (inc. VAT)

Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215
Select packaging type

BD 3.630

BD 0.182 Each (In a Pack of 20) (Exc. Vat)

BD 3.993

BD 0.200 Each (In a Pack of 20) (inc. VAT)

Nexperia N-Channel MOSFET, 1.9 A, 100 V, 3-Pin SOT-23 PMV213SN,215
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
20 - 20BD 0.182BD 3.630
40 - 80BD 0.138BD 2.750
100 - 180BD 0.104BD 2.090
200 - 380BD 0.104BD 2.090
400+BD 0.099BD 1.980

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more