Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 4.489
BD 0.898 Each (In a Pack of 5) (Exc. Vat)
BD 4.938
BD 0.988 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.489
BD 0.898 Each (In a Pack of 5) (Exc. Vat)
BD 4.938
BD 0.988 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.898 | BD 4.489 |
50 - 120 | BD 0.824 | BD 4.121 |
125 - 245 | BD 0.777 | BD 3.885 |
250 - 495 | BD 0.719 | BD 3.596 |
500+ | BD 0.672 | BD 3.360 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.1mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details