Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
BD 2.365
BD 0.236 Each (In a Pack of 10) (Exc. Vat)
BD 2.601
BD 0.260 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 2.365
BD 0.236 Each (In a Pack of 10) (Exc. Vat)
BD 2.601
BD 0.260 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.236 | BD 2.365 |
| 100 - 190 | BD 0.154 | BD 1.540 |
| 200 - 490 | BD 0.143 | BD 1.430 |
| 500 - 990 | BD 0.138 | BD 1.375 |
| 1000+ | BD 0.121 | BD 1.210 |
Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details


