NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

RS Stock No.: 112-5510Brand: NXPManufacturers Part No.: PMBFJ177,215
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Technical Document

Specifications

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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BD 0.245

Each (In a Pack of 5) (Exc. Vat)

BD 0.269

Each (In a Pack of 5) (Including VAT)

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

BD 0.245

Each (In a Pack of 5) (Exc. Vat)

BD 0.269

Each (In a Pack of 5) (Including VAT)

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
5 - 45BD 0.245BD 1.225
50 - 95BD 0.230BD 1.150
100 - 245BD 0.220BD 1.100
250 - 495BD 0.205BD 1.025
500+BD 0.200BD 1.000

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Technical Document

Specifications

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more