NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23

RS Stock No.: 626-3314PBrand: NXPManufacturers Part No.: PMBFJ309,215
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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 30mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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BD 0.140

Each (Supplied on a Reel) (Exc. Vat)

BD 0.154

Each (Supplied on a Reel) (Including VAT)

NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23
Select packaging type

BD 0.140

Each (Supplied on a Reel) (Exc. Vat)

BD 0.154

Each (Supplied on a Reel) (Including VAT)

NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
10 - 90BD 0.140BD 1.400
100 - 190BD 0.125BD 1.250
200 - 390BD 0.120BD 1.200
400 - 790BD 0.115BD 1.150
800+BD 0.100BD 1.000

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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 30mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more