Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 1.100
Each (In a Pack of 10) (Exc. Vat)
BD 1.210
Each (In a Pack of 10) (Including VAT)
10
BD 1.100
Each (In a Pack of 10) (Exc. Vat)
BD 1.210
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 1.100 | BD 11.000 |
100 - 490 | BD 0.905 | BD 9.050 |
500 - 990 | BD 0.825 | BD 8.250 |
1000 - 1490 | BD 0.715 | BD 7.150 |
1500+ | BD 0.685 | BD 6.850 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
151 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
138 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5mm
Typical Gate Charge @ Vgs
60 @ 10 V nC
Maximum Operating Temperature
+150 °C
Width
6mm
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Product details