N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK onsemi FQB19N20LTM

RS Stock No.: 671-0876Brand: ON SemiconductorManufacturers Part No.: FQB19N20LTM
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Transistor Material

Si

Typical Gate Charge @ Vgs

27 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Series

QFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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BD 0.785

Each (In a Pack of 5) (Exc. Vat)

BD 0.863

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK onsemi FQB19N20LTM
Select packaging type

BD 0.785

Each (In a Pack of 5) (Exc. Vat)

BD 0.863

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK onsemi FQB19N20LTM
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.65mm

Transistor Material

Si

Typical Gate Charge @ Vgs

27 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Series

QFET

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more