Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.675
Each (In a Pack of 2) (Exc. Vat)
BD 0.743
Each (In a Pack of 2) (Including VAT)
2
BD 0.675
Each (In a Pack of 2) (Exc. Vat)
BD 0.743
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 0.675 | BD 1.350 |
10 - 98 | BD 0.575 | BD 1.150 |
100 - 248 | BD 0.460 | BD 0.920 |
250 - 498 | BD 0.450 | BD 0.900 |
500+ | BD 0.410 | BD 0.820 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details