Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-204
Mounting Type
Through Hole
Maximum Power Dissipation
115 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
2.5 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
8.51 x 39.37 x 26.67mm
Maximum Operating Temperature
+200 °C
Country of Origin
Mexico
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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BD 1.915
Each (Exc. Vat)
BD 2.107
Each (inc. VAT)
Standard
1
BD 1.915
Each (Exc. Vat)
BD 2.107
Each (inc. VAT)
Standard
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | BD 1.915 |
10+ | BD 1.690 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-204
Mounting Type
Through Hole
Maximum Power Dissipation
115 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
2.5 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
8.51 x 39.37 x 26.67mm
Maximum Operating Temperature
+200 °C
Country of Origin
Mexico
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.