Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Country of Origin
Czech Republic
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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BD 0.010
Each (On a Reel of 3000) (Exc. Vat)
BD 0.011
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.010
Each (On a Reel of 3000) (Exc. Vat)
BD 0.011
Each (On a Reel of 3000) (Including VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | BD 0.010 | BD 30.000 |
6000 - 12000 | BD 0.010 | BD 30.000 |
15000 - 27000 | BD 0.010 | BD 30.000 |
30000 - 57000 | BD 0.010 | BD 30.000 |
60000+ | BD 0.010 | BD 30.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Country of Origin
Czech Republic
Product details