Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Country of Origin
Korea, Republic Of
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BD 0.285
Each (In a Tube of 50) (Exc. Vat)
BD 0.313
Each (In a Tube of 50) (Including VAT)
50
BD 0.285
Each (In a Tube of 50) (Exc. Vat)
BD 0.313
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 450 | BD 0.285 | BD 14.250 |
500 - 950 | BD 0.240 | BD 12.000 |
1000+ | BD 0.235 | BD 11.750 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
50 V
Package Type
TO-220F-3FS
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.16 x 4.7 x 15.87mm
Country of Origin
Korea, Republic Of