Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 8.800
BD 0.176 Each (Supplied as a Tape) (Exc. Vat)
BD 9.680
BD 0.194 Each (Supplied as a Tape) (inc. VAT)
Standard
50
BD 8.800
BD 0.176 Each (Supplied as a Tape) (Exc. Vat)
BD 9.680
BD 0.194 Each (Supplied as a Tape) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 50 | BD 0.176 | BD 8.800 |
| 100 - 950 | BD 0.072 | BD 3.575 |
| 1000 - 2950 | BD 0.050 | BD 2.475 |
| 3000+ | BD 0.038 | BD 1.925 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details


