Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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BD 0.045
Each (Supplied on a Reel) (Exc. Vat)
BD 0.049
Each (Supplied on a Reel) (Including VAT)
100
BD 0.045
Each (Supplied on a Reel) (Exc. Vat)
BD 0.049
Each (Supplied on a Reel) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 900 | BD 0.045 | BD 4.500 |
1000 - 1900 | BD 0.035 | BD 3.500 |
2000 - 9900 | BD 0.030 | BD 3.000 |
10000 - 23900 | BD 0.030 | BD 3.000 |
24000+ | BD 0.025 | BD 2.500 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Country of Origin
China