Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 9.28mm
Country of Origin
China
BD 15.125
BD 0.302 Each (In a Tube of 50) (Exc. Vat)
BD 16.637
BD 0.332 Each (In a Tube of 50) (inc. VAT)
50
BD 15.125
BD 0.302 Each (In a Tube of 50) (Exc. Vat)
BD 16.637
BD 0.332 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.302 | BD 15.125 |
| 100 - 450 | BD 0.220 | BD 11.000 |
| 500 - 950 | BD 0.214 | BD 10.725 |
| 1000 - 2450 | BD 0.214 | BD 10.725 |
| 2500+ | BD 0.214 | BD 10.725 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 9.28mm
Country of Origin
China


